In conjunction with ANSYS,we use the finite element method to analyze the bonding stresses of Si/ GaAs. We also apply a numerical model to investigate a contour map and the distribution of normal stress,shearing stress, and peeling stress, taking into full consideration the thermal expansion coefficient as a function of temperature. Novel bonding structures are proposed for reducing the effect of thermal stress as compared with conventional structures. Calculations show the validity of this new structure.
